2

TP2535/TP2540

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

BV

DSS

TP2540

-400

TP2535

-350

V

GS(th)

Gate Threshold Voltage

-1.0

-2.4

V

V

Change in V

4.8

I

GSS

Gate Body Leakage

-100

nA

V

I

DSS

Zero Gate Voltage Drain Current

-10

V

T

I

D(ON)

ON-State Drain Current

-0.2

-0.3

A

V

-0.4

-1.1

V

R

DS(ON)

Static Drain-to-Source

20

30

Ω

V

ON-State Resistance

19

25

V

Change in R

0.75

G

FS

Forward Transconductance

100

175

m

V

C

ISS

Input Capacitance

60

125

C

OSS

Common Source Output Capacitance

20

70

pF

C

RSS

Reverse Transfer Capacitance

10

25

t

d(ON)

Turn-ON Delay Time

10

t

r

Rise Time

10

t

d(OFF)

Turn-OFF Delay Time

20

t

f

Fall Time

13

V

SD

Diode Forward Voltage Drop

-1.8

V

V

t

rr

Reverse Recovery Time

300

ns

V

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Thermal Characteristics

VV

-1.0

mA

ns

f = 1 MHz

R

Switching Waveforms and Test Circuit

Package

Power Dissipation

@ T

TO-92

-86mA

-0.6A

0.74W

125

170

-86mA

-0.6A

TO-243AA

-125mA

-1.2A

15

-125mA

-1.2A

D

(continuous) is limited by max rated T

j

.

D

increase possible on ceramic substrate.

Drain-to-Source

Breakdown Voltage

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

0V

V

DD

R

gen

0V

-10V