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KDV303N データシート(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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KDV303N データシート(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 4 page 1 www.kexin.com.cn Digital FET, N-Channel KDV303N ■ Features ● 0.68 A, 25 V. RDS(ON) = 0.45 Ω @ VGS = 4.5 V RDS(ON) = 0.6Ω @ VGS = 2.7 V. ● Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. ● Gate-Source Zener for ESD ruggedness. >6kV Human Body Model ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain to Source Voltage VDSS 25 V Gate to Source Voltage VGSS 8 V Drain Current- Continuous 0.68 A Drain Current- pulse 2 A Power Dissipation for Single Operation PD 0.35 W Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 ℃ Thermal Resistance, Junction-to- Ambient RθJA 357 ℃/W ID 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 1. Gate 2. Source 3. Drain D G S SMD Type IC SMD Type MOSFET |
同様の部品番号 - KDV303N |
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同様の説明 - KDV303N |
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