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BAT82S データシート(PDF) 1 Page - Vishay Siliconix |
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BAT82S データシート(HTML) 1 Page - Vishay Siliconix |
1 / 4 page BAT81S...BAT83S Vishay Telefunken Rev. 3, 01-Apr-99 1 (4) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85512 Schottky Barrier Diodes Features D Integrated protection ring against static discharge D Low capacitance D Low leakage current D Low forward voltage drop D Very low switching time Applications General purpose and switching Schottky barrier diode HF–Detector Protection circuit Diode for low currents with a low supply voltage Small battery charger Power supplies DC / DC converter for notebooks 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Reverse voltage BAT81S VR 40 V g BAT82S VR 50 V BAT83S VR 60 V Peak forward surge current tp≤10ms IFSM 500 mA Repetitive peak forward current tp≤1s IFRM 150 mA Forward current IF 30 mA Junction temperature Tj 125 °C Storage temperature range Tstg –65...+150 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient l=4mm, TL=constant RthJA 320 K/W Electrical Characteristics Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=0.1mA VF 330 mV g IF=1mA VF 410 mV IF=15mA VF 1 V Reverse current VR=VRmax IR 200 nA Diode capacitance VR=1V, f=1MHz CD 1.6 pF |
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