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BAT86S データシート(PDF) 1 Page - Vishay Siliconix |
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BAT86S データシート(HTML) 1 Page - Vishay Siliconix |
1 / 4 page BAT86S Vishay Telefunken Rev. 3, 01-Apr-99 1 (4) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85514 Schottky Barrier Diode Features D Integrated protection ring against static discharge D Very low forward voltage Applications Applications where a very low forward voltage is required 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Reverse voltage VR 50 V Peak forward surge current tp ≤ 10 ms IFSM 5 A Repetitive peak forward current tp ≤ 1 s IFRM 500 mA Forward current IF 200 mA Average forward current PCB mounting, l=4mm; VRWM=25V, Tamb=50°C IFAV 200 mA Junction temperature Tj 125 °C Storage temperature range Tstg –65...+150 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient l=4mm, TL=constant RthJA 320 K/W |
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