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データシートサーチシステム |
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J105 データシート(PDF) 3 Page - Vishay Siliconix |
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J105 データシート(HTML) 3 Page - Vishay Siliconix |
3 / 5 page ![]() J105/106/107 Vishay Siliconix Document Number: 70230 S-04028—Rev. D, 04-Jun-01 www.vishay.com 7-3 TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 10 0 –6 –8 –10 –2 8 4 2 0 20 16 8 4 0 10 100 1000 2 .0 1.6 0 –55 25 125 –15 85 500 68 210 400 200 100 0 0 –8 –4 –2 –10 8 4 0 20 030 40 10 50 16 8 4 0 On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage On-Resistance vs. Drain Current Turn-On Switching Turn-Off Switching On-Resistance vs. Temperature Output Characteristics VGS(off) – Gate-Source Cutoff Voltage (V) ID – Drain Current (mA) TA – Temperature (_C) VDS – Drain-Source Voltage (V) VGS(off) – Gate-Source Cutoff Voltage (V) ID – Drain Current (mA) rDS @ ID = 10 mA, VGS = 0 V IDSS @ VDS = 10 V, VGS = 0 V IDSS rDS TA = 25_C VGS(off) = –3 V –5 V –8 V ID = 10 mA rDS changes X 0.7%/_C tr approximately independent of ID VDD = 1.5 V, RG = 50 W VGS(L) = –10 V td(on) @ ID = 10 mA td(off) VGS(off) = –8 V VGS(off) = –3 V td(off) independent of device VGS(off) VDD = 1.5 V, VGS(L) = –10 V 6 1.2 0.8 0.4 –4 12 10 8 4 2 0 6 –35 5 45 65 105 300 4 –6 12 20 VGS(off) = –5 V tr VGS(off) = –3 V –5 V –8 V td(on) @ ID = 30 mA VGS = 0 V –1.0 V –0.5 V –1.5 V –2.0 V –2.5 V –3.0 V tf |
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