データシートサーチシステム |
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BDX78F データシート(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDX78F データシート(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDX78F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.2A ;IB= 0 B -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ;IE= 0 -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ;IC= 0 -5 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A B -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -0.6A B -2.0 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -2V -1.5 V ICEO Collector Cutoff Current VCE= 40V; IB= 0 B -0.2 mA ICBO Collector Cutoff Current VCB= VCBO;IE= 0 VCB= 1/ 2VCBO;IE= 0; T J= 150℃ -0.1 -1.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -0.5 mA hFE DC Current Gain IC= -2A ; VCE= -2V 30 fT Current-Gain—Bandwidth Product IC= -0.3A ; VCE= -3V, ftest= 1.0MHz 7.0 MHz Switching Times ton Turn-On Time 1 μs toff Turn-Off Time IC= -2A; IB1= -IB2= -0.2A 2 μs isc Website:www.iscsemi.cn 2 |
同様の部品番号 - BDX78F |
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同様の説明 - BDX78F |
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