2SA950 datasheet(1/1 Pages) DCCOM

部品番号	2SA950

部品情報	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Download	1 Pages

Scroll/Zoom	100%

メーカー	DCCOM [Dc Components]

ホームページ	http://www.dccomponents.com

Logo

1 / 1 page

2SA950

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description

Designed for low-frequency power amplifier

applications.

Pinning

1 = Emitter

2 = Collector

3 = Base

TO-92

Dimensions in inches and (millimeters)

.022(0.56)

.014(0.36)

.050

(1.27)

.148(3.76)

.132(3.36)

Typ

.190(4.83)

.170(4.33)

.100

(2.54)

Typ

.050

(1.27)

Typ

.022(0.56)

.014(0.36)

.190(4.83)

.170(4.33)

.500

(12.70)

Min

2oTyp

5oTyp.

2oTyp

3 2 1

5oTyp.

Rank

O

Y

Range

100~200

160~320

Classification of hFE2

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

VCBO

-35

V

Collector-Emitter Voltage

VCEO

-30

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-800

mA

Total Power Dissipation

PD

600

mW

Junction Temperature

TJ

+150

o

C

Storage Temperature

TSTG

-55 to +150

o

C

Absolute Maximum Ratings(TA=25oC)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

BVCBO

-35

-

V

IC=-100

µA, IE=0

Collector-Emitter Breakdown Voltage

BVCEO

-30

-

V

IC=-2mA, IB=0

Emitter-Base Breakdown Volatge

BVEBO

-5

-

V

IE=-100

µA, IC=0

Collector Cutoff Current

ICBO

-

-0.1

µA

VCB=-35V, IE=0

Emitter Cutoff Current

IEBO

-

-0.1

µA

VEB=-5V, IC=0

Collector-Emitter Saturation Voltage(1)

VCE(sat)

-

-0.28

-0.7

V

IC=-500mA, IB=-20mA

Base-Emitter Saturation Voltage(1)

VBE(sat)

-

-1.3

V

IC=-500mA, IB=-20mA

hFE1

45

-

IC=-5mA, VCE=-1V

DC Current Gain(1)

hFE2

100

-

320

-

IC=-100mA, VCE=-1V

hFE3

40

-

IC=-500mA, VCE=-1V

Transition Frequency

fT

-

120

-

MHz

IC=-10mA, VCE=-5V

Output Capacitance

Cob

-

19

-

pF

VCE=-10V, f=1MHz, IE=0

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified)

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

同様の部品番号 - 2SA950

メーカー	部品番号	データシート	部品情報
Toshiba Semiconductor	2SA950	136Kb / 2P	TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)
TRANSYS Electronics Lim...	2SA950	66Kb / 1P	Plastic-Encapsulated Transistors
Toshiba Semiconductor	2SA950	304Kb / 3P	Audio Power Amplifier Applications
SeCoS Halbleitertechnol...	2SA950	344Kb / 2P	PNP Plastic Encapsulated Transistor
Tiger Electronic Co.,Lt...	2SA950	259Kb / 2P	TO-92 Plastic-Encapsulate Transistors (PNP)

More results

同様の説明 - 2SA950

メーカー	部品番号	データシート	部品情報
Dc Components	DMBT3906	228Kb / 1P	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
	I772	223Kb / 1P	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
	2N5401	213Kb / 1P	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
	BC328	215Kb / 1P	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
	MPSA55	213Kb / 1P	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
	BC857BS	229Kb / 2P	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
	MJE2955T	196Kb / 1P	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
	MPSA94	214Kb / 1P	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
	TIP32C	196Kb / 1P	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
	TIP42C	196Kb / 1P	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
	2SB772S	213Kb / 1P	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR