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2SA1036K データシート(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA1036K データシート(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Any changing of specification will not be informed individual 2SA1036K PNP Silicon General Purpose Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente * Dim Min Max A 2.70 3.10 B 1.30 1.70 C 1.00 1.30 D 0.35 0.50 G 1.70 2.30 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 1.25 1.65 S 2.25 3.00 All Dimension in mm SC-59 S G D B L A 1 3 2 Top View H C J K BASE EMITTER COLLECTOR FEATURES R n n n oHS Compliant Product Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. Symbol Parameter MARKING : HP, HQ, HR MAXIMUM RATINGS* TA=25 C O unless otherwise noted Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Dissipation 200 mW TJ, Tstg Junction and Storage Temperature -55~150 ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 µA Emitter cut-off current IEBO VEB=-4V,IC=0 -1 µA DC current gain hFE VCE=-3V,IC=-10mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-10mA -0.4 V Transition frequency fT VCE=-5V,IC=-20mA,f=100MHz 200 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 7 pF CLASSIFICATION OF hFE Rank P Q R Range 82 - 180 120 - 270 180 - 390 01-Jun-2002 Rev. A Page 1 of 2 A suffix of "-C" specifies halogen & lead-free |
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同様の説明 - 2SA1036K |
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