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SM55161A-75GBI データシート(PDF) 11 Page - Austin Semiconductor |
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SM55161A-75GBI データシート(HTML) 11 Page - Austin Semiconductor |
11 / 64 page VRAM SM55161A Production Austin Semiconductor, Inc. AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice. 11 SMJ55161A Rev. 1.6 03/05 FIGURE 4: Example of a Byte-Read Cycle byte operation Byte operation can be applied in DRAM-read cycles, write cycles, block-write cycles, load-write-mask-register cycles, and load-color-register cycles. In byte operation, the column address (A0–A8) is latched at the first falling edge of CASx\. In read cycles, CASL\ enables the lower byte (DQ0–DQ7) and CASU\ enables the upper byte (DQ8–DQ15) (see Figure 4). In byte-write operation, CASL enables data to be written to the lower byte (DQ0–DQ7), and CASU\ enables data to be written to the upper byte (DQ8–DQ15). In an early write cycle, WE is brought low prior to both CASx\ signals, and data setup and hold times for DQ0 –DQ15 are referenced to the first falling edge of CASx\ (see Figure 5). For late-write or read-modify-write cycles, WE\ is brought low after either or both CASL\ and CASU\ fall. The data is strobed in with data setup and hold times for DQ0 –DQ15 referenced to WE\ (see Figure 6). |
同様の部品番号 - SM55161A-75GBI |
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同様の説明 - SM55161A-75GBI |
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