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TC1953P データシート(PDF) 1 Page - Transcom, Inc. |
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TC1953P データシート(HTML) 1 Page - Transcom, Inc. |
1 / 3 page TC1953P REV3_20060525 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science- Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 1 / 3 13.75 - 14.75 GHz 1W MMIC FEATURES • P -1 dB: 30.5 dBm • Small Signal Gain: 14 dB • IP3: 40 dBm • DC Power: 600mA@8V DESCRIPTION The TC1953P is a two stages PHEMT power amplifier MMIC that operates from 13.75 to 14.75 GHz. The amplifier provides a minimum of 14 dB Gain and delivers 1Watt output power from 13.75 to 14.75 GHz. The MMIC is fabricated using Transcom’s proprietary matured GaAs PHEMT process. The process features full passivation for increased performance and reliability. All devices are 100 % DC tested to assure consistent quality. Bond pads are gold plated for either thermocompression or thermosonic wire bonding. Backside gold plating is compatible with standard AuSn die-attach. ELECTRICAL SPECIFICATIONS (Ta = 25 °°°°C) SYMBOL DESCRIPTION MIN TYP MAX UNITS FREQ Frequency Range 13.75 14.75 GHz SSG Small Signal Gain 13 14 dB P1 dB Output Power at 1 dB Gain Compression 29.5 30.5 dBm P3 dB Output Power at 3 dB Gain Compression 30 31 dBm IP3 Third Order Intercept Point 39 40 dBm VSWR, IN Input Return Loss - 2:1 VSWR, OUT Output Return Loss - 2:1 VDD Supply Voltage - 8 - Volt Vg Gate Voltage -1.8 -1.0 -0.5 Volt IDD Bias Current 500 600 750 mA ABSOLUTE MAXIMUM RATINGS at 25 °°°°C Symbol Parameter Rating VDS Drain-Source Voltage 10 V VGS Gate-Source Voltage -5 V ID Drain Current 1500 mA PT Continuous Dissipation 7.5 W Pin Input Power, CW 10 dBm TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C PHOTO ENLARGEMENT |
同様の部品番号 - TC1953P |
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同様の説明 - TC1953P |
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