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FM200TU-2A データシート(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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FM200TU-2A データシート(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 5 page Feb. 2009 2 100 ±20 100 200 100 100 200 410 560 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 600 MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE V V Arms A A Arms A W W °C °C Vrms N • m N • m g Drain-source voltage Gate-source voltage Drain current Avalanche current Source current Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mounting torque Weight G-S Short D-S Short TC’ = 137 °C*3 Pulse*2 L = 10 µH Pulse*2 Pulse*2 TC = 25 °C TC’ = 25 °C*3 Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Unit Ratings VDSS VGSS ID(rms) IDM IDA IS(rms)*1 ISM*1 PD*4 PD*4 Tch Tstg Viso — — Conditions Item Symbol Min. — 4.7 — — — — — — — — — — — — — — — — — — — — — — mA V µA m Ω V m Ω nF nC ns ns µC V K/W Drain cutoff current Gate-source threshold voltage Gate leakage current Static drain-source On-state resistance Static drain-source On-state voltage Lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Source-drain voltage Thermal resistance Contact thermal resistance VDS = VDSS, VGS = 0V ID = 10mA, VDS = 10V VGS = VGSS, VDS = 0V ID = 100A VGS = 15V ID = 100A VGS = 15V ID = 100A terminal-chip VDS = 10V VGS = 0V VDD = 48V, ID = 100A, VGS = 15V VDD = 48V, ID = 100A, VGS ± 15V RG = 13 Ω, Inductive load IS = 100A IS = 100A, VGS = 0V MOSFET part (1/6 module)*7 MOSFET part (1/6 module)*3 Case to heat sink, Thermal grease Applied*8 (1/6 module) Case to heat sink, Thermal grease Applied*3, *8 (1/6 module) Unit Limits IDSS VGS(th) IGSS rDS(ON) (chip) VDS(ON) (chip) R(lead) Ciss Coss Crss QG td(on) tr td(off) tf trr*1 Qrr*1 VSD*1 Rth(ch-c) Rth(ch-c’) Rth(c-f) Rth(c’-f’) Conditions Item Symbol Typ. — 6 — 2.4 4.1 0.24 0.41 1.2 1.68 — — — 760 — — — — — 3.6 — — — 0.1 0.09 Max. 1 7.3 1.5 3.3 — 0.33 — — — 50 7 4 — 400 300 450 300 250 — 1.3 0.30 0.22 — — Tch = 25 °C Tch = 125 °C Tch = 25 °C Tch = 125 °C Tch = 25 °C Tch = 125 °C Min. — — Unit Limits Conditions Parameter Symbol Typ. 100 4000 Max. — — k Ω K Resistance B Constant TTh = 25 °C*5 Resistance at TTh = 25 °C, 50°C*5 RTh*6 B*6 NTC THERMISTOR PART ELECTRICAL CHARACTERISTICS (Tch = 25 °C unless otherwise specified.) *1: It is characteristics of the anti-parallel, source-drain free-wheel diode (FWDi). *2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating. *3: Case Temperature (Tc’) measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips. *4: Pulse width and repetition rate should be such as to cause negligible temperature rise. *5: TTh is thermistor temperature. *6: *7: Case Temperature (Tc) measured point is shown in page OUTLINE DRAWING. *8: Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. R25: resistance at absolute temperature T25 [K]: T25 = 25 [ °C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]: T50 = 50 [ °C]+273.15 = 323.15 [K] B = In( )/( ) R25 R50 1 T25 1 T50 ABSOLUTE MAXIMUM RATINGS (Tch = 25 °C unless otherwise specified.) |
同様の部品番号 - FM200TU-2A_09 |
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同様の説明 - FM200TU-2A_09 |
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