1

FEATURES

MAXIMUM RATING

SOD-323

www.paceleader.tw

FM120-N THRU FM1100-N

Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

Low profile surface mounted application in order to

optimize board space.

Low power loss, high efficiency.

High current capability, low forward voltage drop.

High surge capability.

Guardring for overvoltage protection.

Very tiny plastic SMD package.

Ultra high-speed switching.

Silicon epitaxial planar chip, metal silicon junction.

Lead-free parts meet environmental standards of

MIL-STD-19500 /228

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Method 2026

MECHANICAL DATA

o

(AT T =25 C unless otherwise noted)

A

PARAMETER

CONDITIONS

Forward rectified current

Forward surge current

Reverse current

Thermal resistance

Diode junction capacitance

Storage temperature

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

f=1MHz and applied 4V DC reverse voltage

Symbol

MIN.

TYP.

MAX.

UNIT

I

O

I

FSM

I

R

R

èJA

C

J

T

STG

A

A

mA

pF

1.0

30

0.5

+175

-65

90

FM120-N

FM130-N

FM140-N

20

30

40

14

21

28

20

30

40

-55 to +125

SYMBOLS

V

RRM

(V)

V

RMS

V

R

(V)

(V)

*1

*2

*3

*1 Repetitive peak reverse voltage

*2 RMS voltage

*3 Continuous reverse voltage

*4 Maximum forward voltage

O

V

= V

T = 25 C

R

RRM

A

O

V

= V

T = 125 C

R

RRM

A

Junction to ambient

120

10

V

F

(V)

*4

FM150-N

FM160-N

50

60

35

42

50

60

0.70

0.55

-55 to +150

0.85

80

100

56

70

80

100

FM180-N

FM1100-N

O

(C)

Operating

temperature

T,

J

1.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V

CHIP SCHOTTKY BARRIER RECTIFIER

CHIP SCHOTTKY BARRIER RECTIFIER

CHIP SCHOTTKY BARRIER RECTIFIER

CHIP SCHOTTKY BARRIER RECTIFIER

0.012(0.3) Typ.

0.016(0.4) Typ.

0.016(0.4) Typ.

0.106 (2.7)

0.091 (2.3)

0.057 (1.45)

0.041 (1.05)

0.047 (1.2)

0.031 (0.8)