74HCU04 datasheet(4/9 Pages) ONSEMI

部品番号	74HCU04

部品情報	Hex Unbuffered Inverter

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74HCU04

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4

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

Guaranteed Limit

Symbol

Parameter

Test Conditions

VCC

(V)

– 55 to

25_C

v 85_C

v 125_C

Unit

VIH

Minimum High−Level Input

Voltage

Vout = 0.5 V*

|Iout| v 20 mA

2.0

3.0

4.5

6.0

1.7

2.5

3.6

4.8

1.7

2.5

3.6

4.8

l.7

2.5

3.6

4.8

V

VIL

Maximum Low−Level Input

Voltage

Vout = VCC – 0.5 V*

|Iout| v 20 mA

2.0

3.0

4.5

6.0

0.3

0.5

0.8

1.1

0.3

0.5

0.8

1.1

0.3

0.5

0.8

1.1

V

VOH

Minimum High−Level Output

Voltage

Vin = GND

|Iout| v 20 mA

2.0

4.5

6.0

1.8

4.0

5.5

1.8

4.0

5.5

1.8

4.0

5.5

V

Vin = GND

|Iout| v 2.4 mA

|Iout| v 4.0 mA

|Iout| v 5.2 mA

3.0

4.5

6.0

2.36

3.86

5.36

2.26

3.76

5.26

2.20

3.70

5.20

VOL

Maximum Low−Level Output

Voltage

Vin = VCC

|Iout| v 20 mA

2.0

4.5

6.0

0.2

0.5

0.2

0.5

0.2

0.5

V

Vin = VCC

|Iout| v 2.4 mA

|Iout| v 4.0 mA

|Iout| v 5.2 mA

3.0

4.5

6.0

0.32

0.37

0.32

0.40

Iin

Maximum Input Leakage Current Vin = VCC or GND

6.0

±0.1

±1.0

mA

ICC

Maximum Quiescent Supply

Current (per Package)

Vin = VCC or GND

Iout = 0 mA

6.0

2.0

20

40

mA

1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

2. For VCC = 2.0 V, Vout = 0.2 V or VCC − 0.2 V.

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)

Guaranteed Limit

Symbol

Parameter

VCC

(V)

– 55 to

25_C

v 85_C

v 125_C

Unit

tPLH,

tPHL

Maximum Propagation Delay, Input A to Output Y

(Figures 1 and 2)

2.0

3.0

4.5

6.0

70

40

14

12

90

45

18

15

105

50

21

18

ns

tTLH,

tTHL

Maximum Output Transition Time, Any Output

(Figures 1 and 2)

2.0

3.0

4.5

6.0

75

27

15

13

95

32

19

16

110

36

22

19

ns

Cin

Maximum Input Capacitance

—

10

pF

3. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

4. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).

CPD

Power Dissipation Capacitance (Per Inverter)*

Typical @ 25°C, VCC = 5.0 V

pF

15

5. Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the

ON Semiconductor High−Speed CMOS Data Book (DL129/D).

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