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3VD182600YL データシート(PDF) 1 Page - Silan Microelectronics Joint-stock

部品番号 3VD182600YL
部品情報  HIGH VOLTAGE MOSFET CHIPS
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メーカー  SILAN [Silan Microelectronics Joint-stock]
ホームページ  http://www.silan.com.cn
Logo SILAN - Silan Microelectronics Joint-stock

3VD182600YL データシート(HTML) 1 Page - Silan Microelectronics Joint-stock

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3VD182600YL
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.0
2007.08.02
Http: www.silan.com.cn
Page 1 of 1
3VD182600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
Ø
3VD182600YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated
in advanced silicon epitaxial planar technology.
Ø
Advanced termination scheme to provide enhanced
voltage-blocking capability.
Ø
Avalanche Energy Specified
Ø
Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
Ø
The chips may packaged in TO-92DT-3L type and the
typical equivalent product is 1N60C.
Ø
The packaged product is widely used in AC-DC
power suppliers, DC-DC converters and H-bridge
PWM motor drivers.
Ø
Die size: 1.90mm*1.75mm.
Ø
Chip Thickness: 300±20
µm.
Ø
Top metal : Al, Backside Metal : Ag.
CHIP TOPOGRAPHY
ABSOLUTE MAXIMUM RATINGS (Tamb=25
°C)
Parameter
Symbol
Ratings
Unit
Drain-Source voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
Drain Current
ID
800
mA
Operation Junction Temperature
TJ
150
Storage Temperature
Tstg
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25
°C)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
V(BR)DSS
ID=250uA
600
---
----
V
Gate-Threshold Voltage
Vth(GS)
ID=250uA VDS=VGS
2
---
4
V
Gate-body Leakage
lGSS
VGS=±30V, VDS=0V
---
---
±100
nA
Zero Gate Voltage Drain Current
IDSS
VDS=600V, VGS=0V
---
---
1
µA
Drain-Source On-Resistance
RDS(on)
ID=0.5A, VGS=10V
---
---
12
Source-Drain Diode Forward on
Voltage
VFSD
ID=1.0A,VGS=0V
---
---
1.50
V


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