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NBXSPA008 データシート(PDF) 4 Page - ON Semiconductor |
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NBXSPA008 データシート(HTML) 4 Page - ON Semiconductor |
4 / 6 page NBXSPA008 http://onsemi.com 4 Table 6. AC CHARACTERISTICS (VDD = 2.5 V ± 5% or VDD = 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 4) Symbol Characteristic Conditions Min. Typ. Max. Units fCLKOUT Output Clock Frequency 161.1328 MHz Df Frequency Stability − NBXSPA008 (Note 5) ±50 ppm FNOISE Phase−Noise Performance 100 Hz of Carrier −101 dBc/Hz fCLKout = 161.1328 MHz (See Figures 3 and NO TAG) 1 kHz of Carrier −119 dBc/Hz 10 kHz of Carrier −126 dBc/Hz 100 kHz of Carrier −127 dBc/Hz 1 MHz of Carrier −135 dBc/Hz 10 MHz of Carrier −159 dBc/Hz tjit(F) RMS Phase Jitter 12 kHz to 20 MHz 0.5 0.75 ps tjitter Cycle to Cycle, RMS 1000 Cycles 1 8 ps Cycle to Cycle, Peak−to−Peak 1000 Cycles 7 35 ps Period, RMS 10,000 Cycles 0.6 4 ps Period, Peak−to−Peak 10,000 Cycles 5 20 ps tOE/OD Output Enable/Disable Time 200 ns tDUTY_CYCLE Output Clock Duty Cycle (Measured at Cross Point) 48 50 52 % tR Output Rise Time (20% and 80%) 115 400 ps tF Output Fall Time (80% and 20%) 115 400 ps tstart Start−up Time 1 5 ms Aging 1st Year 3 ppm Every Year After 1st 1 ppm NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 4. Measurement taken with outputs terminated with 100 ohm across differential pair. See Figure 4. 5. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration and first year aging. Figure 3. Typical Phase Noise Plot at 161.1328 MHz |
同様の部品番号 - NBXSPA008 |
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同様の説明 - NBXSPA008 |
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