1N3297 datasheet(1/1 Pages) NAINA

部品番号	1N3297

部品情報	SILICON POWER DIODE

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メーカー	NAINA [Naina Semiconductor ltd.]

ホームページ	http://www.nainasemi.com

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NAINA

DO - 8

FEATURES

• Diffused Series

• Available in Normal & Reverse Polarity

• Industrial Grade

• Available In Avalanche Characteristic

ELECTRICALSPECIFICATIONS

I

F

Maximum Average Forward

100A

Current Te=1250C

VFM

Maximum peak forward

1.5V

voltage drop @ Rated IF(AV)

I

FSM

Maximum peak one cycle

2200A

(non-rep) surge current 10 m sec

I

FRM

Maximum peak repetitive

500 A

surge current

I2t

Maximum I2t rating (non-rep.) for

24000 A2 Sec

5 to 10 msec.

1N3288-1N3297

SILICON POWER DIODE

THERMALMECHANICAL SPECIFICATIONS

θθθθθJC

Maximum thermal resistance Junction to case

0.400C/W

Tj

Operating Junction Temp.

-650C to 1500C

Tstg

Storage temperature

-650C to 2000C

Mounting torque

2.0 M-kg min,

(Non-lubricated threads)

3.0 M-kg max

W

Approx, weight

150 gms.

ELECTRICAL RATINGS

TYPE

1N32881N3289 1N32901N3291 1N3292 1N3293 1N32941N3295IN3296

VRRM

Max. repetitive peak reverse

100

200

300

400

500

600

800

1000 1200

voltage (v)

VR(RMS) Max. R.M.S. reverse voltage(V)

70

140

210

280

350

420

560

700

840

VR

Max. D.C. Blocking Voltage (V)

100

200

300

400

500

600

800

1000 1200

Recommended R.M.S. working

40

80

120

160

200

240

320

400

480

Voltage(v)

IR(AV)

Max. Average reverse leakage

200

current @ VRRM Tc 250C (uA)

NAINA SEMICONDUCTOR LTD.,

D-95 ,SECTOR -63 NOIDA(INDIA)

e-mail:sales@nainasemi.com, web site: www.nainasemi.com

同様の部品番号 - 1N3297

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