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TLP560J データシート(PDF) 3 Page - Toshiba Semiconductor |
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TLP560J データシート(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page TLP560J 2002-09-25 3 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF=10mA 1.0 1.15 1.3 V Reverse current IR VR=5V ― ― 10 µA Capacitance CT V=0, f=1MHz ― 10 ― pF Peak off -state current IDRM VDRM=600V ― 10 1000 nA Peak on -state voltage VTM ITM=100mA ― 1.7 3.0 V Holding current IH ― ― 1.0 ― mA Critical rate of rise of off -state voltage dv / dt Vin=240Vrms, Ta=85°C (fig.1) ― 500 ― V / µs Critical rate of rise of commutating voltage dv / dt(c) Vin=60 Vrms, IT=15mA (fig.1) ― 0.2 ― V / µs Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Trigger LED current IFT VT=6V, RL=100Ω ― 5 10 mA Capacitance (input to output) CS VS=0, f=1MHz ― 0.8 ― pF Isolation resistance RS VS=500V 5×10 10 10 14 ― Ω AC, 1 minute 2500 ― ― AC, 1 second, in oil ― 5000 ― Vrms Isolation voltage BVS DC, 1 minute, in oil ― 5000 ― Vdc Fig.1: dv / dt test circuit dv / dt (c) dv / dt 5V, VCC 0V 1 2 3 6 4 Rin 4kΩ 120Ω VCC Vin – + RL |
同様の部品番号 - TLP560J |
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同様の説明 - TLP560J |
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