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74ABT821D データシート(PDF) 1 Page - NXP Semiconductors |
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74ABT821D データシート(HTML) 1 Page - NXP Semiconductors |
1 / 16 page 1. General description The 74ABT821 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. The 74ABT821 bus interface register is designed to eliminate the extra packages required to buffer existing registers and provide extra data width for wider data/address paths of buses carrying parity. The 74ABT821 is a buffered 10-bit wide version of the 74ABT374A. The 74ABT821 is a 10-bit, edge-triggered register coupled to ten 3-state output buffers. The device is controlled by the clock (CP) and output enable (OE) control gates. The register is fully edge triggered. The state of each D input, one set-up time before the LOW-to-HIGH clock transition is transferred to the corresponding output Q of the flip-flop. The 3-state output buffers are designed to drive heavily loaded 3-state buses, MOS memories, or MOS microprocessors. The active LOW output enable (OE) controls all ten 3-state buffers independent of the register operation. When OE is LOW, the data in the register appears at the outputs. When OE is HIGH, the outputs are in high-impedance OFF-state, which means they will neither drive nor load the bus. 2. Features and benefits I High-speed parallel registers with positive-edge triggered D-type flip-flops I Ideal where high speed, light loading, or increased fan-in are required with MOS microprocessors I Output capability: +64 mA and −32 mA I Power-on 3-state I Power-on reset I Latch-up protection exceeds 500 mA per JESD78B class II level A I ESD protection: N HBM JESD22-A114F exceeds 2000 V N MM JESD22-A115-A exceeds 200 V 74ABT821 10-bit D-type flip-flop; positive-edge trigger; 3-state Rev. 03 — 25 February 2010 Product data sheet |
同様の部品番号 - 74ABT821D |
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同様の説明 - 74ABT821D |
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