1PS79SB31 datasheet(3/7 Pages) NXP

部品番号	1PS79SB31

部品情報	Schottky barrier diode

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3 / 7 page

2002 Jan 11

3

NXP Semiconductors

Product data sheet

Schottky barrier diode

1PS79SB31

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1.

Pulse test: tp = 300 μs; δ = 0.02.

THERMAL CHARACTERISTICS

Note

1.

Refer to SC-79 (SOD523) standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VF

forward voltage

see Fig.2;

IF = 0.1 mA

130

190

mV

IF = 1 mA

190

250

mV

IF = 10 mA

255

300

mV

IF = 100 mA

355

410

mV

IF = 200 mA

420

500

mV

IR

continuous reverse current

VR = 10 V; note 1; see Fig.3

2.5

30

μA

Cd

diode capacitance

VR = 1 V; f = 1 MHz; see Fig.4

20

25

pF

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to

ambient

note 1

450

K/W

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