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ADM1026JST-REEL7 データシート(PDF) 5 Page - ON Semiconductor |
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ADM1026JST-REEL7 データシート(HTML) 5 Page - ON Semiconductor |
5 / 55 page ADM1026 http://onsemi.com 5 ELECTRICAL CHARACTERISTICS TA = TMIN to TMAX, VCC = VMIN to VMAX, unless otherwise noted. (Note 1, 2, and 3) Parameter Test Conditions/Comments Min Typ Max Unit POWER SUPPLY Supply Voltage, 3.3 V STBY 3.0 3.3 5.5 V Supply Current, ICC Interface inactive, ADC active 2.5 4.0 mA TEMPERATURE−TO−DIGITAL CONVERTER Internal Sensor Accuracy ±3.0 °C Resolution ±1.0 °C External Diode Sensor Accuracy 0°C < TD < 100°C ±3.0 °C Resolution ±1.0 °C Remote Sensor Source Current High level Low level 90 5.5 mA ANALOG−TO−DIGITAL CONVERTER (Including MUX and ATTENUATORS) Total Unadjusted Error (TUE) (Note 4) ±2.0 % Differential Non−linearity (DNL) ±1.0 LSB Power Supply Sensitivity ±0.1 %/V Conversion Time (Analog Input or Internal Temperature) (Note 5) 11.38 12.06 ms Conversion Time (External Temperature) (Note 5) 34.13 36.18 ms Input Resistance (+5.0 VIN, VCCP, AIN0 − AIN5) 80 100 120 kW Input Resistance of +12 VIN pin 70 100 115 kW Input Resistance of −12 VIN pin 8.0 10 12 kW Input Resistance (AIN6 − AIN9) 5.0 MW Input Resistance of VBAT pin (Note 4) 80 100 120 kW VBAT Current Drain (when measured) CR2032 battery life >10 years 80 100 nA VBAT Current Drain (when not measured) 6.0 nA ANALOG OUTPUT (DAC) Output Voltage Range 0 –2.5 V Total Unadjusted Error (TUE) IL = 2 mA ±5.0 % Zero Error No load 1.0 LSB Differential Non−linearity (DNL) Monotonic by design ±1.0 LSB Integral Non−linearity ±0.5 LSB Output Source Current 2.0 mA Output Sink Current 1.0 mA REFERENCE OUTPUT Output Voltage Bit 2 of Register 07h = 0 Bit 2 of Register 07h = 1 1.8 2.47 1.82 2.50 1.84 2.53 V Load Regulation (ISINK = 2 mA) 0.15 % Load Regulation (ISOURCE = 2 mA) 0.15 % Short Circuit Current VCC = 3.3 V 25 mA Output Current Source 2.0 mA Output Current Sink 2.0 mA |
同様の部品番号 - ADM1026JST-REEL7 |
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同様の説明 - ADM1026JST-REEL7 |
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