BC488BRL1 datasheet(1/6 Pages) ONSEMI

部品番号	BC488BRL1

部品情報	High Current Transistors PNP Silicon

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September, 2005 − Rev. 1

1

Publication Order Number:

BC488B/D

BC488B

High Current Transistors

PNP Silicon

Features

• Pb−Free Package is Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector - Emitter Voltage

VCEO

−60

Vdc

Collector - Base Voltage

VCBO

−60

Vdc

Emitter-Base Voltage

VEBO

−4.0

Vdc

Collector Current − Continuous

IC

−1.0

Adc

Total Device Dissipation

@ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation

@ TC = 25°C

Derate above 25

°C

PD

1.5

12

W

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

−55 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Ambient

RqJA

200

°C/W

Thermal Resistance,

Junction−to−Case

RqJC

83.3

°C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device

Package

Shipping†

ORDERING INFORMATION

BC488BRL1

TO−92

2000/Tape & Reel

COLLECTOR

1

2

BASE

3

EMITTER

BC488B = Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MARKING DIAGRAM

BC

488B

AYWW

G

BC488BRL1G

TO−92

(Pb−Free)

2000/Tape & Reel

http://onsemi.com

TO−92

CASE 29

STYLE 17

3

2

1

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