MMSF7P03HDR2 datasheet(2/8 Pages) ONSEMI

部品番号	MMSF7P03HDR2

部品情報	Power MOSFET 7 A, 30 V, P?묬hannel SO??

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MMSF7P03HD

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 2)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

30

−

Vdc

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

1.0

25

mAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

Vdc

Static Drain−to−Source On−Resistance

(VGS = 10 Vdc, ID = 5.3 Adc)

(VGS = 4.5 Vdc, ID = 2.0 Adc)

RDS(on)

−

26

42

35

50

m

W

Forward Transconductance (VDS = 15 Vdc, ID = 2.5 Adc)

gFS

−

12

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 24 Vdc, VGS = 0 V,

f = 1.0 MHz)

Ciss

−

1200

1680

pF

Output Capacitance

Coss

−

580

810

Transfer Capacitance

Crss

−

160

220

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

(VDD = 15 Vdc, ID = 1.0 Adc,

VGS = 4.5 Vdc, RG = 10 W)

td(on)

−

23.5

47

ns

Rise Time

tr

−

42.7

85.4

Turn−Off Delay Time

td(off)

−

57.4

114.8

Fall Time

tf

−

53.6

107.2

Turn−On Delay Time

(VDD = 15 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc, RG = 6.0 W)

td(on)

−

16

32

Rise Time

tr

−

15.2

30.6

Turn−Off Delay Time

td(off)

−

99.7

199.4

Fall Time

tf

−

55.2

110.4

Gate Charge

(See Figure 8)

(VDS = 10 Vdc, ID = 4.9 Adc,

VGS = 6.0 Vdc)

QT

−

37.9

75.8

nC

Q1

−

4.2

−

Q2

−

11.5

−

Q3

−

7.6

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 2.3 Adc, VGS = 0 Vdc)

(IS = 2.3 Adc, VGS = 0 Vdc,

TJ = 125°C)

VSD

−

0.76

0.61

1.2

−

Vdc

Reverse Recovery Time

(IS = 4.9 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms)

trr

−

47.9

−

ns

ta

−

27

−

tb

−

21

−

Reverse Recovery Stored Charge

QRR

−

0.052

−

mC

2. Negative sign for P−Channel device omitted for clarity.

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperature.

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