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N04L63W1AB7I データシート(PDF) 4 Page - ON Semiconductor

部品番号 N04L63W1AB7I
部品情報  4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 횞 16 bit
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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Rev. 13 | Page 4 of 10 | www.onsemi.com
N04L63W1A
Power Savings with Page Mode Operation (WE = VIH)
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Page Address (A4 - A17 )
LB, UB
OE
CE
Word Address (A0 - A3)
Open page
Word 1
Word 2
Word 16
...


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