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データシートサーチシステム |
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RB451F データシート(PDF) 1 Page - Rohm |
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RB451F データシート(HTML) 1 Page - Rohm |
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1 / 2 page  RB451F Diodes Schottky barrier diode RB451F ! ! ! !Applications Low power rectification ! ! ! !Features 1) Small surface mounting type. (UMD3) 2) Low VF. (VF=0.45V Typ. at 100mA) 3) High reliability. ! ! ! !Construction Silicon epitaxial planar ! ! ! !Circuit ! ! ! !External dimensions (Units : mm) (All leads have the same dimensions) 0 ~0.1 0.15 ±0.05 0.3 ±0.1 2.0 ±0.2 1.3 ±0.1 0.65 0.65 0.9 ±0.1 0.3 0.6 ROHM : UMD3 EIAJ : SC - 70 JEDEC : SOT - 323 ! ! ! !Absolute maximum ratings (Ta = 25 °C) Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 40 V Mean rectifying current IO 0.1 A Peak forward surge current∗ IFSM 1A Tj 125 °C Storage temperature Tstg °C ∗ 60Hz for 1 Junction temperature −40~+125 ! ! ! !Electrical characteristics (Ta = 25 °C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF1 −− 0.55 V IF =100mA VF2 −− 0.34 V IF =10mA Reverse current IR −− 30 µA VR =10V Capacitance between terminals − 6.0 − pF VR =10V, f=1MHz Note) ESD sensitive product handling required. CT |
同様の部品番号 - RB451F |
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同様の説明 - RB451F |
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