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KM416C256D データシート(PDF) 4 Page - Samsung semiconductor

部品番号 KM416C256D
部品情報  256K x 16Bit CMOS Dynamic RAM with Fast Page Mode
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メーカー  SAMSUNG [Samsung semiconductor]
ホームページ  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416C256D データシート(HTML) 4 Page - Samsung semiconductor

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KM416C256D, KM416V256D
CMOS DRAM
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3, ICC6 and ICC7, address can be changed maximum once while RAS=VIL. In
ICC4, address can be changed maximum once within one fast page mode cycle time, tPC.
DC AND OPERATING CHARACTERISTICS (Continued)
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @tRC=min.)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=0.2V,
Din=Don't care, TRC=125us, TRAS=TRASmin~300ns
ICCS : Self Refresh Current
RAS=UCAS=LCAS=VIL, W=OE=A0 ~ A8=VCC-0.2V or 0.2V,
DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM416V254D
KM416C254D
ICC1
Don't care
-5
-6
-7
-
90
80
110
90
80
mA
mA
mA
ICC2
Don't care
Don't care
1
2
mA
ICC3
Don't care
-5
-6
-7
-
90
80
110
90
80
mA
mA
mA
ICC4
Don't care
-5
-6
-7
-
60
55
70
60
55
mA
mA
mA
ICC5
Normal
L
Don't care
0.5
100
1
150
mA
uA
ICC6
Don't care
-5
-6
-7
-
90
80
110
90
80
mA
mA
mA
ICC7
L
Don't care
200
300
uA
ICCS
L
Don't care
100
200
uA


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