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BTA316B-600E データシート(PDF) 6 Page - NXP Semiconductors |
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BTA316B-600E データシート(HTML) 6 Page - NXP Semiconductors |
6 / 13 page BTA316B_SER_B_C_E_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 19 April 2007 6 of 13 NXP Semiconductors BTA316B series B, C and E 16 A Three-quadrant triacs high commutation 6. Static characteristics Table 5. Static characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions BTA316B-600B BTA316B-800B BTA316B-600C BTA316B-800C BTA316B-600E BTA316B-800E Unit Min Typ Max Min Typ Max Min Typ Max IGT gate trigger current VD =12V; IT = 0.1 A; see Figure 8 T2+ G+ 2 - 50 2 - 35 - - 10 mA T2+ G − 2 - 50 2 - 35 - - 10 mA T2 − G− 2 - 50 2 - 35 - - 10 mA IL latching current VD =12V; IGT = 0.1 A; see Figure 10 T2+ G+ - - 60 - - 50 - - 25 mA T2+ G − --90 --60 --30 mA T2 − G− --60 --50 --30 mA IH holding current VD =12V; IGT = 0.1 A; see Figure 11 --60 --35 --15 mA VT on-state voltage IT =18 A; see Figure 9 - 1.3 1.5 - 1.3 1.5 - 1.3 1.5 V VGT gate trigger voltage VD =12V; IT = 0.1 A; see Figure 7 - 0.8 1.5 - 0.8 1.5 - 0.8 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 °C 0.25 0.4 - 0.25 0.4 - 0.25 0.4 - V ID off-state current VD =VDRM(max); Tj = 125 °C - 0.1 0.5 - 0.1 0.5 - 0.1 0.5 mA |
同様の部品番号 - BTA316B-600E |
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同様の説明 - BTA316B-600E |
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