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PD20015-E データシート(PDF) 1 Page - STMicroelectronics

部品番号 PD20015-E
部品情報  RF power transistor, LdmoST family
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD20015-E データシート(HTML) 1 Page - STMicroelectronics

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April 2009
Doc ID 14005 Rev 2
1/16
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PD20015-E
PD20015S-E
RF power transistor, LdmoST family
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC european
directive
Description
The PD20015-E is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 13.6 V in common source mode at
frequencies of up to 1 GHz. PD20015-E boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD20015-E’s superior linearity performance
makes it an ideal solution for mobile radio
applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/ (look for application note AN1294)
Figure 1.
Pin connection
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Gate
Source
Drain
Table 1.
Device summary
Order codes
Package
Packing
PD20015-E
PowerSO-10RF (formed lead)
Tube
PD20015S-E
PowerSO-10RF (straight lead)
PD20015TR-E
PowerSO-10RF (formed lead)
Tape and reel
PD20015STR-E
PowerSO-10RF (straight lead)
www.st.com


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