2SD1314

2006-11-21

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)

2SD1314

High Power Switching Applications

Motor Control Applications

Characteristics

Symbol

Rating

Unit

Collector-base voltage

600

V

Collector-emitter voltage

450

V

Emitter-base voltage

6

V

DC

15

Collector current

Pulse

30

A

Base current

1.0

A

Collector power dissipation

150

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-21F1A

Weight: 9.75 g (typ.)

BASE

EMITTER

≈ 300 Ω

≈ 100 Ω

COLLECTOR