BCP52-16 datasheet(4/6 Pages) INFINEON

部品番号	BCP52-16

部品情報	PNP Silicon AF Transistors

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メーカー	INFINEON [Infineon Technologies AG]

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4 / 6 page

2008-10-10

4

BCP51...-BCP53...

DC current gain hFE = ƒ(IC)

VCE = 2 V

10

EHP00261

BCP 51...53

04

10

mA

0

10

3

10

5

10

1

10

2

10

1

C

FE

h

Ι

3

10

2

10

C

100

5

25 C

-50 C

Collector-emitter saturation voltage

IC = ƒ(VCEsat), hFE = 10

0

10

EHP00264

BCP 51...53

CEsat

V

0.4

V

0.8

0

101

102

4

10

5

Ι

C

mA

5

3

10

0.2

0.6

C

100

25 C

C

-50

Base-emitter saturation voltage

IC = ƒ(VBEsat), hFE = 10

0

10

EHP00263

BCP 51...53

BEsat

V

0

4

10

Ι

C

mA

0.2

1

10

2

10

3

10

0.4

0.6

0.8

1.2

V

C

100

25 C

-50C

Collector cutoff current ICBO = ƒ(TA)

VCBO = 30 V

0

10

EHP00262

BCP 51...53

A

T

150

-1

4

10

Ι

CBO

nA

50

100

0

10

1

10

3

10

C

102

max

typ

同様の部品番号 - BCP52-16

メーカー	部品番号	データシート	部品情報
NXP Semiconductors	BCP52-16	44Kb / 8P	PNP medium power transistors 1999 Apr 08
Siemens Semiconductor G...	BCP52-16	140Kb / 5P	PNP Silicon AF Transistors (For AF driver and output stages High collector current)
Infineon Technologies A...	BCP52-16	48Kb / 5P	PNP Silicon AF Transistors Nov-29-2001
STMicroelectronics	BCP52-16	48Kb / 4P	LOW POWER PNP TRANSISTOR
NXP Semiconductors	BCP52-16	1Mb / 22P	60 V, 1 A PNP medium power transistors Rev. 9-18 October 2011

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同様の説明 - BCP52-16

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