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BUZ73AH データシート(PDF) 1 Page - Infineon Technologies AG |
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BUZ73AH データシート(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page Rev. 2.4 Page 1 2009-11-10 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 73 A 200 V 5.5 A 0.6 Ω PG-TO-220-3 yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 37 ˚C ID 5.5 A Pulsed drain current TC = 25 ˚C IDpuls 22 Avalanche current,limited by Tjmax IAR 7 Avalanche energy,periodic limited by Tjmax EAR 6.5 mJ Avalanche energy, single pulse ID = 7 A, VDD = 50 V, RGS = 25 Ω L = 3.67 mH, Tj = 25 ˚C EAS 120 Gate source voltage VGS ± 20 V Power dissipation TC = 25 ˚C Ptot 40 W Operating temperature Tj -55 ... + 150 ˚C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 3.1 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 BUZ 73A H . Halogen-free according to IEC61249-2-21 |
同様の部品番号 - BUZ73AH |
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同様の説明 - BUZ73AH |
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