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2SC1923 データシート(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

部品番号 2SC1923
部品情報  NPN Plastic Encapsulated Transistor
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メーカー  SECOS [SeCoS Halbleitertechnologie GmbH]
ホームページ  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2SC1923 データシート(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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2SC1923
0.02 A , 40 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
24-Feb-2011 Rev. A
Page 1 of 1
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
A
C
E
K
F
D
B
G
H
J

Base

Emitter
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching and Amplification
CLASSIFICATION OF hFE
Product-Rank
2SC1923-R
2SC1923-O
2SC1923-Y
Range
40~80
70~140
100~200
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCEO
30
V
Emitter to Base Voltage
VEBO
4
V
Collector Current - Continuous
IC
20
mA
Collector Power Dissipation
PC
100
mW
Thermal Resistance From Junction To Ambient
RθJA
1250
°C / W
Junction, Storage Temperature
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
40
-
-
V
IC=0.1mA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
30
-
-
V
IC=1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
4
-
-
V
IE=0.1mA, IC=0
Collector Cut – Off Current
ICBO
-
-
0.5
μA
VCB=18V, IE=0
Emitter Cut – Off Current
IEBO
-
-
0.5
μA
VEB=4V, IC=0
DC Current Gain
hFE
40
-
200
VCE=6V, IC=1mA
Transition Frequency
fT
-
550
-
MHz
VCE=6V, IC=1mA
Emitter
Collector
Base
TO-92
REF.
Millimeter
Min.
Max.
A
4.40
4.70
B
4.30
4.70
C
12.70
-
D
3.30
3.81
E
0.36
0.56
F
0.36
0.51
G
1.27 TYP.
H
1.10
-
J
2.42
2.66
K
0.36
0.76


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