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BCP1898 データシート(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BCP1898 データシート(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente BCP1898 1A, 100V NPN Epitaxial Planar Transistor 10-Dec-2010 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The BCP1898 is designed for switching applications. MARKING CLASSIFICATION OF hFE Product-Rank BCP1898-P BCP1898-Q BCP1898-R Range 82~180 120~270 180~390 PACKAGE INFORMATION Package MPQ LeaderSize SOT-89 1K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5.0 V IC 1 Collector Current ICP(Single pulse Pw=20ms) 2 A Total Power Dissipation PD 500 mW Junction & Storage temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage BVCBO 100 - - V IC=50µA Collector-emitter breakdown voltage BVCEO 80 - - V IC=1mA Emitter-base breakdown voltage BVEBO 5 - - V IE=50µA Collector cut-off current ICBO - - 1 µ A VCB=80V Emitter cut-off current IEBO - - 1 µ A VEB=4V DC current gain hFE 82 - 390 VCE=3V, IC= 500mA Collector-emitter saturation voltage VCE(sat) - - 400 mV IC=500mA, IB= 20mA Transition frequency f T - 100 - MHz VCE=10V, IC=50mA, f=100MHz Output Capacitance COB - 25 - pF VCB=10V, IE=0, f=1MHz SOT-89 A E C D B K H F G L J 1 2 3 4 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 4.40 4.60 G 0.40 0.58 B 3.94 4.25 H 1.50 TYP C 1.40 1.60 J 3.00 TYP D 2.30 2.60 K 0.32 0.52 E 1.50 1.70 L 0.35 0.44 F 0.89 1.2 0 1 8 9 8 Date Code |
同様の部品番号 - BCP1898 |
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同様の説明 - BCP1898 |
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