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BCX70J データシート(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BCX70J データシート(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 3 page Elektronische Bauelemente BCX70J NPN Silicon Plastic-Encapsulate Transistor 26-Oct-2009 Rev. B Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Current Low Voltage MARKING : AJ MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Base Voltage VCBO 45 V Collector - Emitter Voltage VCEO 45 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 200 mA Collector Power Dissapation PC 250 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 ℃ ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage IC=10µA, IE =0 V(BR)CBO 45 V Collector-Emitter Breakdown Voltage IC=2mA, IB =0 V(BR)CEO 45 V Emitter-Base Breakdown Voltage IE=1µA, IC =0 V(BR)EBO 5 V Collector Cut-Off Current VCE=45V, VBE =0 ICES 20 nA VCE=5V, IC=10µA hFE1 30 VCE=5V, IC=2mA hFE2 250 460 DC Current Gain VCE=1V, IC=50mA hFE3 90 IC =10mA, IB =0.25mA VCE(sat)1 0.05 0.35 V Collector-Emitter Saturation Voltage IC =50mA, IB =1.25mA VCE(sat)2 0.1 0.55 V IC=10mA, IB=-0.25mA VBE(sat)1 0.6 0.85 V Base-Emitter Saturation Voltage IC=50mA, IB=1.25mA VBE(sat)2 0.7 1.05 V Base-Emitter Voltage VCE=5V, IC=2mA VBE 0.55 0.75 V Collector Output Capacitance VCB=10V, IE =0, f =1MHz COB 1.7 pF Noise Figure VCE=5V,IC=200µA,f=1KHZ, BW=200HZ,RS=2KΩ NF 6 dB Gain-Bandwidth Product VCE =5V, IC=10mA,f=100MHz FT 100 250 MHz SOT-23 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.70 3.04 G - 0.18 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 Top View A L C B D G H J F K E 1 2 3 1 2 3 |
同様の部品番号 - BCX70J |
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同様の説明 - BCX70J |
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