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CZT5551 データシート(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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CZT5551 データシート(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Any changing of specification will not be informed individual CZT5551 NPN Transistor Epitaxial Planar Transistor RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente The CZT5551 is designed for general purpose applications requiring high breakdown voltages. ELECTRICAL CHARACTERISTICS Tamb=25 C unlessotherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100uA,IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA,IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE= 10uA,IC=0 6 V Collector cut-off current ICBO VCB= 120V,IE=0 50 nA Emitter cut-off current IEBO VEB= 4V,IC=0 50 nA hFE 1 VCE= 5V, IC= 1mA 80 400 DC current gain hFE 2 VCE= 5V, IC= 10mA 80 Collector-emitter saturation voltage VCE(sat) IC= 10mA,IB= 1mA 0.15 V Base-emitter saturation voltage VBE(sat) IC= 10mA,IB= 1mA V Transition frequency fT VCE= 10V,IC= 10mA, f = 100MHz 100 MHz _ 160 1 Collector output capacitance Cob VCB= 10V, f=1MHz,IE=0 pF 6 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ hFE 3 VCE= 5V, IC= 50mA 50 _ _ _ 300 1 _ VCE(sat) IC= 50mA,IB= 5mA 0.2 _ 2 _ _ 1 VBE(sat) IC= 50mA,IB= 5mA 1 _ _ 2 CLASSIFICATION OF hFE Rank A N C Range 80-200 100-240 160-400 o 600 6 1.5 160 180 SOT-223 01-Jun-2004 Rev. B Page 1 of 2 REF. Min. Max. REF. Min. Max. A 6.70 7.30 B 13 C TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 E 0 C 10 C 2 6.30 6.70 I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70 5 1.40 1.80 Description 5 5 5 1 Date Code B C E MAXIMUM RATINGS* (Tamb =25 , unless otherwise specified) C o Symbol Parameter Value Collector Current-Continuous IC Tstg TJ, Junction and Total Power Dissipation VEBO PD Emitter-Base Voltage V mA W Storage Temperature -55~-150 C O VCEO Collector-Emitter Voltage V VCBO Collector-Base Voltage V Units |
同様の部品番号 - CZT5551 |
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同様の説明 - CZT5551 |
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