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SM30100D データシート(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SM30100D データシート(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente SM30100D VOLTAGE 100 V 30A Schottky Barrier Rectifiers 03- Jan-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D P O G E F H K L J M N RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low forward voltage drop High current capability High reliability High surge current capability Epitaxial construction MECHANICAL DATA Case: Molded plastic Epoxy: UL94V-0 rate flame retardant Lead: Lead solderable per MIL-STD-202 method 208 guaranteed Polarity: As Marked Mounting position: Any Weight: 2.24 grams MAXIMUM RATINGS Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20%. PARAMETER SYMBOL RATING UNIT Maximum Repetitive Peak Reverse Voltage VRRM 100 V Maximum RMS Voltage VRMS 70 V Maximum DC Blocking Voltage VDC 100 V Maximum Average Forward Rectified Current (per leg) (per device) IF 15 30 A Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A TA=25°C 0.85 Maximum Instantaneous Forward Voltage @15A TA=100°C VF 0.72 V TA=25°C 0.1 Maximum Reverse Current at Rated VRRM Per Diode (Note 3) TA=100°C IR 5 mA Typical Junction Capacitance (Note 1 ) CJ 350 pF Voltage Rate Of Change dv/dt 10000 V/us RθJA 50 °C/W Typical Thermal Resistance RθJc 3.0 °C/W Operating & Storage Temperature TJ ,TSTG -55~150 °C NOTES: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2. Thermal Resistance Junction to Case. 3. Plus test: 300uS Pulse width, 1% duty cycle.. Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 9.50 10.50 H 1.50 REF. C 4.30 4.80 J 2.54 TYP. D 1.17 1.45 K - - E 9.50 10.50 L 0.71 1.00 F 4.33 5.93 M 1.17 1.47 G 8.50 9.00 P 0.31 0.53 TO-263(D 2-PACK) |
同様の部品番号 - SM30100D |
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同様の説明 - SM30100D |
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