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SEMICONDUCTOR

TECHNICAL DATA

KRA107~KRA109

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 1

SWITCHING APPLICATION.

INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

FEATURES

・With Built-in Bias Resistors

・Simplify Circuit Design

・Reduce a Quantity of Parts and Manufacturing Process

1. EMITTER

2. COLLECTOR

3. BASE

TO-92

DIM MILLIMETERS

A

B

C

D

F

G

H

J

K

L

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

14.00 0.50

0.55 MAX

2.30

D

1

2 3

B

K

G

H

F

F

E

C

E

N

0.45 MAX

M

1.00

N

+_

TYPE NO.

R1(k

Ω)

R2(k

Ω)

KRA107

10

47

KRA108

22

47

KRA109

47

22

CHARACTERISTIC

SYMBOL

RATING

UNIT

Output Voltage

KRA107

～109

-50

V

Input Voltage

KRA107

-30, 6

V

KRA108

-40, 7

KRA109

-40, 15

Output Current

KRA107

～109

-100

mA

Power Dissipation

625

mW

Junction Temperature

150

℃

Storage Temperature Range

-55

～150

℃

EQUIVALENT CIRCUIT

BIAS RESISTOR VALUES

MAXIMUM RATING (Ta=25

℃)

R1

R2

COMMON(+)

OUT

IN