MJW3281A datasheet(1/6 Pages) ONSEMI

部品番号	MJW3281A

部品情報	Complementary NPN-PNP Silicon Power Bipolar Transistors

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メーカー	ONSEMI [ON Semiconductor]

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March, 2010 − Rev. 4

1

Publication Order Number:

MJW3281A/D

MJW3281A (NPN)

MJW1302A (PNP)

Complementary NPN-PNP

Silicon Power Bipolar

Transistors

The MJW3281A and MJW1302A are PowerBase

t power

transistors for high power audio, disk head positioners and other linear

applications.

Features

• Designed for 100 W Audio Frequency

• Gain Complementary:

Gain Linearity from 100 mA to 7 A

hFE = 45 (Min) @ IC = 8 A

• Low Harmonic Distortion

• High Safe Operation Area − 1 A/100 V @ 1 Second

• High fT − 30 MHz Typical

• Pb−Free Packages are Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO

230

Vdc

Collector−Base Voltage

VCBO

230

Vdc

Emitter−Base Voltage

VEBO

5.0

Vdc

Collector−Emitter Voltage − 1.5 V

VCEX

230

Vdc

Collector Current

− Continuous

Collector Current

− Peak (Note 1)

IC

15

25

Adc

Base Current − Continuous

IB

1.5

Adc

Total Power Dissipation @ TC = 25°C

Derate Above 25°C

PD

200

1.43

W

W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg −65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

0.625

°C/W

Thermal Resistance, Junction−to−Ambient

RqJA

40

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device

Package

Shipping

ORDERING INFORMATION

MJW3281A

TO−247

CASE 340L

30 Units/Rail

2

1

15 AMPERES

COMPLEMENTARY

SILICON POWER TRANSISTORS

230 VOLTS 200 WATTS

3

MARKING DIAGRAM

MJWxxxxA

AYWWG

xxxx = 3281 or 1302

A

= Assembly Location

Y

= Year

WW = Work Week

G

= Pb−Free Package

MJW1302A

TO−247

30 Units/Rail

1 BASE

2 COLLECTOR

3 EMITTER

http://onsemi.com

MJW1302AG

TO−247

(Pb−Free)

30 Units/Rail

MJW3281AG

TO−247

(Pb−Free)

30 Units/Rail

同様の部品番号 - MJW3281A

メーカー	部品番号	データシート	部品情報
ON Semiconductor	MJW3281A	91Kb / 8P	Complementary NPN-PNP Silicon Power Bipolar Transistors March, 2002 ??Rev. 1
ON Semiconductor	MJW3281A	74Kb / 6P	15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS January, 2006 ??Rev. 3
Inchange Semiconductor ...	MJW3281A	231Kb / 2P	isc Silicon NPN Power Transistor
ON Semiconductor	MJW3281AG	74Kb / 6P	15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS January, 2006 ??Rev. 3
ON Semiconductor	MJW3281A	74Kb / 6P	15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS January, 2006 ??Rev. 3

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同様の説明 - MJW3281A

メーカー	部品番号	データシート	部品情報
ON Semiconductor	NJW3281G	117Kb / 7P	Complementary NPN-PNP Silicon Power Bipolar Transistors September, 2013 ??Rev. 1
	MJL4281A	55Kb / 6P	Complementary NPN-PNP Silicon Power Bipolar Transistors July, 2003 ??Rev. 1
	NJW3281G	89Kb / 7P	Complementary NPN-PNP Silicon Power Bipolar Transistors January, 2008 - Rev. 0
	MJW3281A	91Kb / 8P	Complementary NPN-PNP Silicon Power Bipolar Transistors March, 2002 ??Rev. 1
	MJL0281A	58Kb / 5P	Complementary NPN-PNP Power Bipolar Transistors June, 2006 ??Rev. 1
	NJW0281G	108Kb / 5P	Complementary NPN-PNP Power Bipolar Transistors September, 2013 ??Rev. 1
	MJW0281A	67Kb / 6P	Complementary NPN-PNP Power Bipolar Transistors June, 2005 ??Rev. 2
	NJW0281G	80Kb / 5P	Complementary NPN-PNP Power Bipolar Transistors September, 2013 ??Rev. 1
	MJL4281A	102Kb / 5P	Complementary NPN-PN Silicon Power Bipolar Transistors June, 2013 ??Rev. 3
	MJW0281AG	63Kb / 6P	Complementary NPN?뭁NP Power Bipolar Transistors June, 2005 ??Rev. 2

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