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2SA1037-S データシート(PDF) 1 Page - Micro Commercial Components |
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2SA1037-S データシート(HTML) 1 Page - Micro Commercial Components |
1 / 2 page 2SA1037-R PNP Silicon Epitaxial Transistors Features • Small Package omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC Revision: A 20 11/01/01 TM Micro Commercial Components www.mccsemi.com 1 of 2 SOT-23 Suggested Solder Pad Layout DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .110 .120 2.80 3.04 B .083 .098 2.10 2.64 C .047 .055 1.20 1.40 D .035 .041 .89 1.03 E .070 .081 1.78 2.05 F .018 .024 .45 .60 G .0005 .0039 .013 .100 H .035 .044 .89 1.12 J .003 .007 .085 .180 K .015 .020 .37 .51 A B C D E F G H J .079 2.000 inches mm .031 .800 .035 .900 .037 .950 .037 .950 K Maximum Ratings @ Ta = 25 (unless otherwise noted) Symbol Parameter Value Unit IC Collector Current -0.15 A PD Total Device Dissipation 0.2 W TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Electrical Characteristics @ 25 OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage (IC=-1mAdc,IB=0) -50 V V(BR)CBO Collector-Base Breakdown Voltage (IC=-50uAdc,IE=0) -60 V V(BR)EBO Collector-Base Breakdown Voltage (IE=-50uAdc,IC=0) -6.0 V ICBO Collector-Base Cutoff Current (VCB=-60Vdc, IE=0) -0.1 µAdc IEBO Emitter-Base Cutoff Current (VEB=-6.0Vdc, IC=0) -0.1 uAdc ON CHARACTERISTICS HFE DC Current Gain (IC=-1.0mAdc, VCE=-6.0Vdc) 120 560 VCE(sat) Collector-Emitter Saturation Voltage (IC=-5.0mAdc, IB=-5.0mAdc) -0.5 Vdc )7 Transition Frequency (VCE=-12Vdc,IC=-2mAdc,f=30MHZ) 120 MHZ CLASSIFICATION OF hFE Rank Q R S Range 120-270 180-390 270-560 Marking FQ FR FS E B C • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Mounting:any position • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 2SA1037-Q 2SA1037-S |
同様の部品番号 - 2SA1037-S |
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同様の説明 - 2SA1037-S |
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