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TS13003BCTA3G データシート(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

部品番号 TS13003BCTA3G
部品情報  High Voltage NPN Transistor
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メーカー  TSC [Taiwan Semiconductor Company, Ltd]
ホームページ  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

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TS13003B
High Voltage NPN Transistor
2/5
Version: D07
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC = 1mA, IB = 0
BVCBO
700
--
--
V
Collector-Emitter Breakdown Voltage
IC = 10mA, IE = 0
BVCEO
400
--
--
V
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
BVEBO
9
--
--
V
Collector-Emitter Cutoff Current
VCE = 400V, IB = 0
ICEO
--
--
1
uA
Collector-Emitter Cutoff Current @45
oC
VCE = 400V, IB = 0
ICEO
--
0.5
--
uA
Collector Cutoff Current
VCB = 700V, IE = 0
ICBO
--
--
1
uA
Collector Cutoff Current @45
oC
VCB = 700V, IE = 0
ICBO
--
0.2
--
uA
Emitter Cutoff Current
VEB = 9V, IC = 0
IEBO
--
0.1
1
uA
Collector-Emitter Saturation Voltage
IC / IB = 0.5A / 0.1A
IC / IB = 1.0A / 0.25A
IC / IB = 1.5A / 0.5A
VCE(SAT)1
VCE(SAT)2
VCE(SAT)3
--
--
--
0.2
0.3
0.5
0.5
1
3
V
Base-Emitter Saturation Voltage
IC / IB = 0.5A / 0.1A
IC / IB = 1.0A / 0.25A
VBE(SAT)1
VBE(SAT)2
--
--
--
--
1.1
1.3
V
DC Current Gain
VCE = 2V, IC = 10mA
VCE = 2V, IC = 400mA
VCE = 2V, IC = 1A
hFE1
hFE2
hFE3
6
23
6
--
--
--
40
40
40
Dynamic
Frequency
VCE = 10V, IC = 0.1A
fT
4
--
--
MHz
Output Capacitance
VCB = 10V, f = 0.1MHz
Cob
--
21
--
pF
Resistive Load Switching Time (Ratings)
Delay Time
td
--
0.05
0.2
uS
Rise Time
tr
--
0.6
1
uS
Storage Time
tSTG
--
2
4
uS
Fall Time
VCC = 125V, IC = 1A,
IB1 = IB2 = 20mA,
tp = 25uS
Duty Cycle ≤1%
tf
--
0.2
0.7
uS
Note: pulse test: pulse width ≤300uS, duty cycle ≤2%


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