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ST1S30IPUR データシート(PDF) 7 Page - STMicroelectronics

部品番号 ST1S30IPUR
部品情報  3 A, 1.5 MHz PWM step-down switching regulator with synchronous rectification
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ST1S30IPUR データシート(HTML) 7 Page - STMicroelectronics

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ST1S30
Electrical characteristics
Doc ID 17927 Rev 1
7/11
Refer to Figure 4 application circuit VIN_SW = VIN_A = VINH = 5 V, VO = 1.2 V, C1 = 10 µF, C2
= 22, C3 = 1 µF, L1 = 2.2 µH, TJ = -25 to 125 °C (unless otherwise specified. Typical values
are referred to 25 °C)
Table 7.
Electrical characteristics for ST1S30I
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
FB
Feedback voltage
784
800
816
mV
IFB
VFB pin bias current
600
nA
VI
Minimum input voltage
IO = 10 mA to 2 A
2.7
V
OVP
Overvoltage protection
threshold
VO rising
1.05 VO 1.1 VO
V
Overvoltage protection
hysteresis
VO falling
5
%
IQ
Quiescent current
VINH > 1.2 V, not switching
1.5
2.5
mA
VINH < 0.0 V, T = - 30 °C to 85 °C
1
µA
IO
Output current
VI = 2.7 to 5.5 V
(1)
3A
VINH
Inhibit threshold
Device ON, VI = 2.7 to 5.5 V
1.3
V
Device ON, VI = 2.7 to 5 V
1.2
Device OFF
0.4
IINH
Inhibit pin current
2µA
%VO/ΔVI
Output line regulation
VI = 2.7 V to 5.5 V, IO = 100 mA
(1)
0.16
%VO/
ΔV
I
%VO/ΔIO
Output load regulation
IO = 10 mA to 2 A
(1)
0.2
0.6
%VO/
ΔI
O
PWMfS
PWM switching frequency
VFB = 0.65 V
1.2
1.5
1.8
MHz
DMAX
Maximum duty cycle
80
87
%
RDSON-N NMOS switch on resistance
ISW = 750 mA
0.1
Ω
RDSON-P PMOS switch on resistance
ISW = 750 mA
0.1
Ω
ISWL
Switching current limitation
(1)
3.7
4.4
5.1
A
ν
Efficiency (1)
IO = 10 mA to 100 mA, VO = 3.3 V
65
%
IO = 100 mA to 3 A, VO = 3.3 V
85
TSHDN
Thermal shutdown
150
°C
THYS
Thermal shutdown hysteresis
20
°C
%VO/ΔIO
Load transient response
IO = 100 mA to 1 A, TA = 25 °C
tR = tF ≥ 200 ns
(1)
-10
+10
%VO
%VO/ΔIO
Short circuit removal response
IO = 10 mA to IO = short,
TA = 25 °C
(1)
-10
+10
%VO
1.
Guaranteed by design, but not tested in production.


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