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FM21LD16-60-BGTR データシート(PDF) 11 Page - Ramtron International Corporation |
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FM21LD16-60-BGTR データシート(HTML) 11 Page - Ramtron International Corporation |
11 / 15 page FM21LD16 - 128Kx16 FRAM Rev. 1.1 Apr. 2011 Page 11 of 15 Power Cycle Timing (TA = -40° C to + 85° C, VDD = 2.7V to 3.6V unless otherwise specified) Symbol Parameter Min Max Units Notes tPU Power-Up (after VDD min. is reached) to First Access Time 450 - µs tPD Last Write (/WE high) to Power Down Time 0 - µs tVR VDD Rise Time 50 - µs/V 1,2 tVF VDD Fall Time 100 - µs/V 1,2 Notes 1 Slope measured at any point on VDD waveform. 2 Ramtron cannot test or characterize all VDD power ramp profiles. The behavior of the internal circuits is difficult to predict when VDD is below the level of a transistor threshold voltage. Ramtron strongly recommends that VDD power up faster than 100ms through the range of 0.4V to 1.0V. Data Retention (VDD = 2.7V to 3.6V) Parameter Min Units Notes Data Retention 10 Years AC Test Conditions Input Pulse Levels 0 to 3V Input and Output Timing Levels 1.5V Input Rise and Fall Times 3 ns Output Load Capacitance 30pF Read Cycle Timing 1 (/CE low, /OE low) Read Cycle Timing 2 (/CE-controlled) |
同様の部品番号 - FM21LD16-60-BGTR |
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同様の説明 - FM21LD16-60-BGTR |
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