BDX86B datasheet(1/2 Pages) ISC

部品番号	BDX86B

部品情報	isc Silicon PNP Darlington Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

BDX86/A/B/C

DESCRIPTION

·High DC Current Gain-

: hFE= 750(Min)@ IC= -3A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -45V(Min)- BDX86; -60V(Min)- BDX86A

-80V(Min)- BDX86B; -100V(Min)- BDX86C

·Complement to Type BDX85/A/B/C

APPLICATIONS

·Designed for use in power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDX86

-45

BDX86A

-60

BDX86B

-80

VCBO

Collector-Base Voltage

BDX86C

-100

V

BDX86

-45

BDX86A

-60

BDX86B

-80

VCEO

Collector-Emitter Voltage

BDX86C

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-15

A

IB

B

Base Current

-100

mA

PC

Collector Power Dissipation

@ TC=25℃

100

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature Range

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.75

℃/W

isc Website：www.iscsemi.cn

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