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GT100DA60U データシート(PDF) 4 Page - Vishay Siliconix |
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GT100DA60U データシート(HTML) 4 Page - Vishay Siliconix |
4 / 10 page GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93185 4 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10 Fig. 5 - Typical Diode Forward Characteristics Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current Fig. 7 - Typical IGBT Threshold Voltage Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V Fig. 9 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, L = 500 μH, VCC = 360 V, Rg = 5 , VGE = 15 V Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 360 V, Rg = 5 , VGE = 15 V VFM (V) 03.0 0.5 1.0 1.5 2.0 2.5 0 93185_05 200 100 75 175 50 150 25 125 T J = 175 °C T J = 25 °C T J = 125 °C VCES (V) 100 600 200 300 400 500 0.00001 93185_06 10 0.1 0.01 0.001 0.0001 1 T J = 25 °C T J = 125 °C T J = 175 °C IC (mA) 0.2 1.0 0.3 0.4 0.6 0.8 0.5 0.7 0.9 2.5 3.0 3.5 4.0 4.5 93185_07 5.0 T J = 25 °C T J = 125 °C TJ (°C) 20 180 60 100 140 1.0 1.5 2.0 93185_08 2.5 100 A 50 A 27 A IC (A) 10 30 50 90 70 110 0 93185_09 3.0 1.5 2.5 2.0 1.0 0.5 E on E off IC (A) 020 60 80 100 40 120 10 93185_10 1000 100 t d(off) t d(on) t f t r |
同様の部品番号 - GT100DA60U |
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同様の説明 - GT100DA60U |
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