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HFA200FA120P データシート(PDF) 2 Page - Vishay Siliconix |
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HFA200FA120P データシート(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94607 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10 HFA200FA120P Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 200 A DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Reverse recovery time trr TJ = 25 °C IF = 50 A dIF/dt = - 200 A/μs VR = 200 V - 150 - ns TJ = 125 °C - 237 - Peak recovery current IRRM TJ = 25 °C - 14 - A TJ = 125 °C - 21 - Reverse recovery charge Qrr TJ = 25 °C - 1050 - nC TJ = 125 °C - 2430 - THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction to case, single leg conducting RthJC -- 0.3 °C/W Junction to case, both legs conducting - - 0.15 Case to heatsink RthCS Flat, greased and surface - 0.05 - Weight -30 - g Mounting torque -1.3 - Nm |
同様の部品番号 - HFA200FA120P |
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同様の説明 - HFA200FA120P |
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