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MJ10003 データシート(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ10003 データシート(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ10003 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.25A; IB= 0 350 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.25A B IC= 5A; IB= 0.25A, T B C= 100℃ 1.9 2.0 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 2.9 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.25A B IC= 5A; IB= 0.25A, T B C= 100℃ 2.5 2.5 V ICEV Collector Cutoff Current VCE=500V;VBE(off)=1.5V VCE=500V;VBE(off)=1.5V;TC=100℃ 0.25 5.0 mA ICER Collector Cutoff Current VCE=500V; RBE= 50Ω; TC= 100℃ 5.0 mA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 175 mA hFE-1 DC Current Gain IC= 2.5A, VCE= 5V 40 500 hFE-2 DC Current Gain IC= 5A, VCE= 5V 30 300 VECF C-E Diode Forward Voltage IF= 5A 5.0 V COB Output Capacitance IE= 0, VCB= 10V; f= 0.1MHz 60 pF Switching Times; Resistive Load td Delay Time 0.2 μs tr Rise Time 0.6 μs ts Storage Time 3.0 μs tf Fall Time VCC= 250V; IC= 5A; IB1= 0.25A VBE(off)= 5V tp= 50μs, Duty Cycle≤2% 1.5 μs isc Website:www.iscsemi.cn |
同様の部品番号 - MJ10003 |
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同様の説明 - MJ10003 |
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