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MJ10003 データシート(PDF) 2 Page - Inchange Semiconductor Company Limited

部品番号 MJ10003
部品情報  isc Silicon NPN Darlington Power Transistor
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
MJ10003
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.25A; IB= 0
350
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.25A
B
IC= 5A; IB= 0.25A, T
B
C= 100℃
1.9
2.0
V
V CE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 1A
2.9
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 0.25A
B
IC= 5A; IB= 0.25A, T
B
C= 100℃
2.5
2.5
V
ICEV
Collector Cutoff Current
VCE=500V;VBE(off)=1.5V
VCE=500V;VBE(off)=1.5V;TC=100℃
0.25
5.0
mA
ICER
Collector Cutoff Current
VCE=500V; RBE= 50Ω; TC= 100℃
5.0
mA
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
175
mA
hFE-1
DC Current Gain
IC= 2.5A, VCE= 5V
40
500
hFE-2
DC Current Gain
IC= 5A, VCE= 5V
30
300
VECF
C-E Diode Forward Voltage
IF= 5A
5.0
V
COB
Output Capacitance
IE= 0, VCB= 10V; f= 0.1MHz
60
pF
Switching Times; Resistive Load
td
Delay Time
0.2
μs
tr
Rise Time
0.6
μs
ts
Storage Time
3.0
μs
tf
Fall Time
VCC= 250V; IC= 5A; IB1= 0.25A
VBE(off)= 5V
tp= 50μs, Duty Cycle≤2%
1.5
μs
isc Website:www.iscsemi.cn


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