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SI1032R-T1-GE3 データシート(PDF) 4 Page - Vishay Siliconix |
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SI1032R-T1-GE3 データシート(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 71172 S10-2544-Rev. F, 08-Nov-10 Vishay Siliconix Si1032R/X TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71172. Threshold Voltage Variance vs. Temperature - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 0.3 - 50 - 25 0 25 50 75 100 125 ID = 0.25 mA TJ - Temperature (°C) IGSS vs. Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) VGS = 2.8 V BVGSS vs. Temperature 0 1 2 3 4 5 6 7 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1032R Only) 10-3 10-2 0 0 6 0 1 1 10-1 10-4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 500 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
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同様の説明 - SI1032R-T1-GE3 |
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