SI1410EDH_10 datasheet(1/11 Pages) VISHAY

部品番号	SI1410EDH

部品情報	N-Channel 20 V (D-S) MOSFET

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Vishay Siliconix

Si1410EDH

Document Number: 71409

S10-0935-Rev. B, 19-Apr-10

www.vishay.com

1

N-Channel 20 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFETs: 1.8 V Rated

•

ESD Protected: 2000 V

•

Thermally Enhanced SC-70 Package

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switching

•

PA Switch

•

Level Switch

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

20

0.070 at VGS = 4.5 V

3.7

0.080 at VGS = 2.5 V

3.4

0.100 at VGS = 1.8 V

3.0

Ordering Information: Si1410EDH-T1-E3 (Lead (Pb)-free)

Si1410EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)

Marking Code

AA

XX

Lot Traceability

and Date Code

Part # Code

SOT-363

SC-70 (6-LEADS)

6

4

1

2

3

5

Top View

D

G

D

S

D

S

G

1 k

Ω

Notes:

a. Surface mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

3.7

2.9

A

TA = 85 °C

2.6

2.0

Pulsed Drain Current

IDM

8

Continuous Diode Current (Diode Conduction)a

IS

1.4

0.9

Maximum Power Dissipationa

TA = 25 °C

PD

1.56

1.0

W

TA = 85 °C

0.81

0.52

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 5 s

RthJA

60

80

°C/W

Steady State

100

125

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

34

45

同様の部品番号 - SI1410EDH_10

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI1410EDH	70Kb / 6P	N-Channel 20-V (D-S) MOSFET S-03185-Rev. A, 05-Mar-01

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