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SIZ702DT-T1-GE3 データシート(PDF) 8 Page - Vishay Siliconix |
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SIZ702DT-T1-GE3 データシート(HTML) 8 Page - Vishay Siliconix |
8 / 12 page www.vishay.com 8 Document Number: 65525 S09-2266-Rev. A, 02-Nov-09 Vishay Siliconix SiZ702DT New Product CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS =10 V thru 4 V VGS =3 V VGS =2 V VDS - Drain-to-Source Voltage (V) 0.006 0.008 0.010 0.012 0.014 0 102030 405060 VGS =10 V VGS =4.5 V ID - Drain Current (A) 0 2 4 6 8 10 0 3 6 9 12 15 VDS =24 V VDS =15 V ID = 13.8 A VDS =7.5 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TC = 25 °C TC = 125 °C TC =- 55 °C VGS - Gate-to-Source Voltage (V) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 Ciss Coss Crss VDS - Drain-to-Source Voltage (V) 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 - 50 -- 25 0 25 50 75 100 125 150 ID =13.8 A VGS =10 V;4.5 V TJ -Junction Temperature (°C) |
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