データシートサーチシステム |
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BCP51-16 データシート(PDF) 3 Page - Siemens Semiconductor Group |
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BCP51-16 データシート(HTML) 3 Page - Siemens Semiconductor Group |
3 / 5 page Semiconductor Group 3 BCP 51 ... BCP 53 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. DC current gain1) IC = 5 mA, VCE = 2 V IC = 150 mA, VCE = 2 V BCP 51/BCP 52/BCP 53 BCP 51/BCP 52/BCP 53-10 BCP 51/BCP 52/BCP 53-16 IC = 500 mA, VCE = 2 V V Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCP 51 BCP 52 BCP 53 V(BR)CE0 45 60 80 – – – – – – nA µA Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C ICB0 – – – – 100 20 Unit Values Parameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 100 µA, IB = 0 BCP 51 BCP 52 BCP 53 V(BR)CB0 45 60 100 – – – – – – Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EB0 5–– V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA VCEsat – – 0.5 – hFE 25 40 63 100 25 – – 100 160 – – 250 160 250 – Base-emitter voltage1) IC = 500 mA, VCE = 2 V VBE ––1 µA Emitter-base cutoff current VEB = 5 V, IC = 0 IEB0 ––10 MHz Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz fT – 125 – AC characteristics 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. |
同様の部品番号 - BCP51-16 |
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同様の説明 - BCP51-16 |
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