BCP68-16 datasheet(2/4 Pages) SIEMENS

部品番号	BCP68-16

部品情報	NPN Silicon AF Transistor (For general AF application High collector current High current gain)

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Semiconductor Group

2

BCP 68

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

V

Collector-emitter breakdown voltage

IC = 30 mA, IB = 0

V(BR)CE0

20

–

Collector-base breakdown voltage

IC = 10

µA, IB = 0

V(BR)CB0

25

–

DC current gain1)

IC = 5 mA, VCE = 10 V

IC = 500 mA, VCE = 1 V

BCP 68

BCP 68-10

BCP 68-16

BCP 68-25

IC = 1 A, VCE = 1 V

hFE

50

85

100

160

60

–

100

160

250

–

375

160

250

375

–

MHz

Transition frequency

IC = 100 mA, VCE = 5 V, f = 100 MHz

fT

–

100

–

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

AC characteristics

Emitter-base breakdown voltage

IE = 10

µA, IB = 0

V(BR)EB0

5––

nA

µA

Collector-base cutoff current

VCB = 25 V

VCB = 25 V, TA = 150 ˚C

ICB0

–

100

nA

Emitter-base cutoff current

VEB = 5 V, IC = 0

IEB0

–

100

V

Collector-emitter saturation voltage1)

IC = 1 A, IB = 100 mA

VCEsat

–

0.5

Base-emitter voltage1)

IC = 5 mA, VCE = 10 V

IC = 1 A, VCE = 1 V

VBE

–

0.6

–

1

Collector-emitter breakdown voltage

IC = 10

µA, VBE = 0

V(BR)CES

25

–

1)

Pulse test conditions: t

≤ 300 µs, D = 2 %.

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